Datasheet Details
| Part number | 2SC2987A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.45 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2987A Download (PDF) |
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| Part number | 2SC2987A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 82.45 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC2987A Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1227A APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 20 A 120 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC2987A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SC2987A | PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | ETC |
| ETC | 2SC2987 | PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR | ETC |
 |
2SC2987 | Silicon power Transistor | SavantIC |
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