Datasheet Details
| Part number | 2SC3085 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.04 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3085 Download (PDF) |
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| Part number | 2SC3085 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.04 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3085 Download (PDF) |
|
|
|
·High Breakdown Voltage- : V(BR)CBO= 500V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 160 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3085 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3085 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3085 | NPN Triple Diffused Planar Silicon Transistor | Sanyo |
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