Datasheet Details
| Part number | 2SC3230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.58 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3230 Download (PDF) |
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| Part number | 2SC3230 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.58 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3230 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3230 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3230 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC3252 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
| 2SC3123 | Silicon NPN RF Transistor |
| 2SC3124 | Silicon NPN RF Transistor |
| 2SC3125 | Silicon NPN RF Transistor |
| 2SC3127 | Silicon NPN RF Transistor |
| 2SC3130 | Silicon NPN RF Transistor |