Datasheet Details
| Part number | 2SC3353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.16 KB |
| Description | Power Transistor |
| Download | 2SC3353 Download (PDF) |
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| Part number | 2SC3353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.16 KB |
| Description | Power Transistor |
| Download | 2SC3353 Download (PDF) |
|
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· ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3353 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
isc Silicon NPN Power Transistor 2SC3353.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3353 | Silicon NPN Transistor | Panasonic |
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2SC3353A | NPN Transistor | INCHANGE |
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2SC3353A | Silicon NPN Transistor | Panasonic |
| Part Number | Description |
|---|---|
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| 2SC3357 | Silicon NPN RF Transistor |
| 2SC3303 | Silicon NPN Power Transistor |
| 2SC3371 | Power Transistor |
| 2SC3388 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |