Datasheet4U Logo Datasheet4U.com

2SC3421 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor 2SC3421.

General Description

·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·plement to Type 2SA1358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.

·Suitable for driver of 60 to 80 Watts audio amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.1 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

2SC3421 Distributor