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2SC3547 - Silicon NPN RF Transistor

Description

High Current-Gain

fT = 4 GHz TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV tuner, UHF oscillator applications.

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Datasheet Details

Part number 2SC3547
Manufacturer Inchange Semiconductor
File Size 179.52 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC3547 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3547 DESCRIPTION ·High Current-Gain—Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.
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