2SC3547A Description
·High Current-Gain Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
2SC3547A is Silicon NPN RF Transistor manufactured by Inchange Semiconductor .
·High Current-Gain Bandwidth Product fT = 4 GHz TYP. @ VCE = 10 V,IC = 5 mA APPLICATIONS ·Designed for TV tuner, UHF oscillator applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.