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2SC3561 - N-Channel MOSFET Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Switching regulator and high voltage switching applications.

High speed DC-DC converter appli

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Datasheet Details

Part number 2SC3561
Manufacturer Inchange Semiconductor
File Size 195.40 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2SC3561 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.
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