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2SC3626 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak 8 A 10 IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3626 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3626 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;

Overview

isc Silicon NPN Power Transistor.