Datasheet Details
| Part number | 2SC3627 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.42 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3627 Download (PDF) |
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| Part number | 2SC3627 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.42 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3627 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak 10 A 15 IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3627 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3627 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3627 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3657 | Silicon NPN Power Transistors |
| 2SC3658 | Silicon NPN Power Transistors |
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| 2SC3678 | Silicon NPN Power Transistors |