Datasheet Details
| Part number | 2SC3657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.74 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3657 Download (PDF) |
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| Part number | 2SC3657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.74 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC3657 Download (PDF) |
|
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor 2SC3657.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3657 | NPN Transistor | Toshiba Semiconductor |
| Part Number | Description |
|---|---|
| 2SC3658 | Silicon NPN Power Transistors |
| 2SC3659 | Silicon NPN Power Transistors |
| 2SC3619 | Silicon NPN Power Transistors |
| 2SC3626 | Silicon NPN Power Transistors |
| 2SC3627 | Silicon NPN Power Transistors |
| 2SC3636 | Silicon NPN Power Transistors |
| 2SC3637 | Silicon NPN Power Transistors |
| 2SC3638 | Silicon NPN Power Transistors |
| 2SC3640 | Silicon NPN Power Transistor |
| 2SC3678 | Silicon NPN Power Transistors |