2SC3657 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3657 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

📥 Download Datasheet

2SC3657 Datasheet Preview — Preview of 2SC3657 PDF

Datasheet Specifications

Part number: 2SC3657
Manufacturer: Inchange Semiconductor
File Size: 201.74 KB
Datasheet: 2SC3657_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Colle

2SC3657 Distributors

📁 Related Datasheet

2SC3650 2SC3651 2SC3652 2SC3653 2SC3654 2SC3656

📌 All Tags

2SC3657 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC3657-like datasheet