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2SC3693 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3693 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;

IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A;

Overview

isc Silicon NPN Power Transistor.