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2SC3838 - Silicon NPN Transistor

Description

NF = 3.5 dB TYP.

fT = 3.2 GHz TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3838 DESCRIPTION ·Low Noise NF = 3.5 dB TYP. @VCE = 6 V, IC = 2 mA, f = 500 MHz ·High Current-Gain Bandwidth Product fT = 3.2 GHz TYP. @VCE = 10 V, IC = 10 mA, f = 500 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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