2SC3856-P Description
·High Collector-Emitter Breakdown Voltage- : IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V.
2SC3856-P is Silicon NPN Transistor manufactured by Inchange Semiconductor .
·High Collector-Emitter Breakdown Voltage- : IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V.