900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Inchange Semiconductor

2SC3866 Datasheet Preview

2SC3866 Datasheet

Silicon NPN Power Transistors

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage
: V(BR)CBO= 900V(Min)
·High Switching Speed
·High Reliability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
900
V
800
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
10
V
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
1
A
40
W
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.0 /W
2SC3866
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SC3866 Datasheet Preview

2SC3866 Datasheet

Silicon NPN Power Transistors

No Preview Available !

isc Silicon NPN Power Transistor
2SC3866
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 2A , IB1= 0.4A; IB2= -0.8A
RL=150Ω;
PW=20μs; Duty2%
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0 mA
1.0 mA
10
1.0 μs
4.0 μs
0.8 μs
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SC3866
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
PDF Download

2SC3866 Datasheet PDF






Similar Datasheet

1 2SC3860 EPITAXIAL PLANAR SILICON TRANSISTORS
Sanyo Semicon Device
2 2SC3862 Silicon NPN Transistor
Toshiba Semiconductor
3 2SC3862 Silicon NPN Transistor
Inchange Semiconductor
4 2SC3863 EPITAXIAL PLANAR SILICON TRANSISTORS
Sanyo Semicon Device
5 2SC3863 NPN Transistors
Kexin
6 2SC3864 EPITAXIAL PLANAR SILICON TRANSISTORS
Sanyo
7 2SC3865 EPITAXIAL PLANAR SILICON TRANSISTORS
ETC
8 2SC3865 Silicon NPN triple diffusion planar type Transistor
New Jersey Semiconductor
9 2SC3866 SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy