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2SC3866 - Silicon NPN Power Transistors

Description

High Breakdown Voltage : V(BR)CBO= 900V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purp

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Datasheet Details

Part number 2SC3866
Manufacturer Inchange Semiconductor
File Size 193.43 KB
Description Silicon NPN Power Transistors
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 900 V 800 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 10 V 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1 A 40 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,
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