2SC3990 transistor equivalent, silicon npn power transistor.
*Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAM.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
*High Switching Speed
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for sw.
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