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2SC4226 - Silicon NPN Transistor

Description

Low Collector Curren -IC= 0.1A Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATI

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4226 DESCRIPTION ·Low Collector Curren -IC= 0.1A ·Low Collector Power—Pc=0.1W With SOT-323 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 100 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65--150 ℃ isc website：www.iscsemi.
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