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isc Silicon NPN RF Transistor
DESCRIPTION ·Low Noise
NF = 1.4 dB TYP., @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·High Gain
︱S21e︱2 = 12 dB TYP. @VCE = 3 V, IC = 7 mA, f = 1.0 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
10
V
VEBO Emitter-Base Voltage
1.5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
65
mA
0.15
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
2SC4227
isc website：www.iscsemi.
2SC4227 Datasheet
