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2SC4242 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 4.0A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.125 ℃/W isc Website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4242 CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4242.