Datasheet4U Logo Datasheet4U.com

2SC4245 Datasheet Silicon NPN RF Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Current-Gain Bandwidth Product fT= 2400MHz TYP.

@VCE = 10 V, IC = 2 mA ·Low Noise ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV tuner , UHF mixer applications ·VHF~UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 25 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4245 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT ICBO Collector Cutoff Current VCB= 30V;

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4245.