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2SC4247 Datasheet Silicon NPN RF Transistor

Manufacturer: Inchange Semiconductor

General Description

·High Current-Gain Bandwidth Product fT= 4 GHz TYP.

@VCE = 10 V, IC = 10 mA ·Low Noise ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV tuner , UHF oscillator applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4247 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4247.