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2SC4249 Datasheet Silicon NPN RF Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Noise NF = 2dB TYP.

@ f = 200MHz ·High Gain Gpe = 24dB TYP.

@ f = 200MHz APPLICATIONS ·TV VHF RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 20 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4249 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

Overview

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product.