Datasheet Details
| Part number | 2SC4293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.83 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC4293 Datasheet
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| Part number | 2SC4293 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.83 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC4293 Datasheet
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·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·Built-in Damper Diode ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-definition color display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4293 CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A;
IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4293.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4293 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
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| 2SC4245 | Silicon NPN RF Transistor |
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| 2SC4250 | Silicon NPN RF Transistor |