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Inchange Semiconductor

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2SC4442 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4442
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 500V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCES
Collector-Emitter Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
1.6
A
2
W
45
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
1
isc & iscsemi is registered trademark




Inchange Semiconductor

2SC4442 Datasheet Preview

2SC4442 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC4442
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
1.5
V
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
10
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
6
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V; f= 1MHz
5
MHz
Switching Times
ton
Turn-on Time
0.5 μs
ts
Storage Time
IC= 2A; IB1= 0.4A; IB2= -0.8A;
VCC= 150V
2.0 μs
tf
Fall Time
0.1 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc Websitewww.iscsemi.cn
2
isc & iscsemi is registered trademark


Part Number 2SC4442
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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