| Part number | 2SC4442 |
|---|---|
| Datasheet | 2SC4442_InchangeSemiconductor.pdf |
| File Size | 180.92 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
· ·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
See all Inchange Semiconductor datasheets
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