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2SC4461 - Silicon NPN Power Transistor

Description

High Breakdown Voltage- : V(BR)CEO= 500V(Min) Fast Switching speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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Datasheet Details

Part number 2SC4461
Manufacturer Inchange Semiconductor
File Size 225.79 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SC4461 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 65 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4461 isc website：www.iscsemi.
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