Datasheet Details
| Part number | 2SC4603R |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.43 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC4603R Download (PDF) |
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| Part number | 2SC4603R |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.43 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC4603R Download (PDF) |
|
|
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 10 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃/W INCHANGE Semiconductor 2SC4603R isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4603R CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC4603 | NPN TRANSISTOR | Fuji Electric |
 |
2SC4603 | TRIPLE DIFFUSED PLANER TYPE TRANSISTOR | New Jersey Semi-Conductor |
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