2SC4603R transistor equivalent, silicon npn power transistor.
*Switching regulators
*Ultrasonic generators
*High frequency inverters
*General purpose power amplifiers.
*High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
*High Switching Speed
*High Reliability
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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