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2SC4742 - Silicon NPN Power Transistors

Description

High Breakdown Voltage- : VCES= 1500V (Min) Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for character display horizontal deflection output stage applications ABSOLUTE M

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2SC4742 NPN TRANSISTOR Hitachi Semiconductor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4742 DESCRIPTION ·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A IC(peak) Collector Current-Peak 7 A IC(surge) Collector Current-Surge 16 A ID C-E Diode Forward Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.
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