isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4742
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 400mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
tf
Fall Time
ICP= 5A , IB1= 1A; IB2= -2A
MIN TYP. MAX UNIT
6
V
2.0
V
1.5
V
500 μA
25
2.0
V
0.4 μs
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
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