Datasheet Details
| Part number | 2SC4766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.16 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC4766 Datasheet
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| Part number | 2SC4766 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.16 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC4766 Datasheet
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·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous ±6 A ICP Collector Current-Pulse ±12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4766.
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