Datasheet Details
| Part number | 2SC4901 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.09 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC4901 Datasheet
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| Part number | 2SC4901 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 228.09 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC4901 Datasheet
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· High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V，IC=20mA，f=0.9GHz · High gain, low noise figure ︱S21e︱2 = 13.5 dB @ VCE=5V，IC=20mA，f=0.9GHz, NF = 1.6dB( Typ ) @ VCE=5V，IC=5mA， f=0.9GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·UHF / VHF wide band amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 9 V VEBO Emitter-Base voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 50 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC4901 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCBO Collector-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product | S21e |2 Power gain NF Noise figure CONDITIONS IC= 1uA ;
IE= 0 VCB= 10V ;
IE= 0 VEB= 1V;
isc Silicon NPN RF Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4901 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SC4901 | Silicon NPN Transistor | Renesas |
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2SC4901YK | NPN Transistor | INCHANGE |
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