Datasheet Details
| Part number | 2SC5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.88 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5027 Datasheet
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| Part number | 2SC5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.88 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5027 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 50 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BVEBO Emitter -Base Breakdown Voltage IE= 1mA;
IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA;
isc Silicon NPN Power Transistor 2SC5027.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5027 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5027 | NPN SILICON TRANSISTOR | UTC |
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2SC5027 | Silicon NPN Transistor | Nell |
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2SC5027 | SILICON NPN TRANSISTOR | LZG |
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2SC5027 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
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