Datasheet Details
| Part number | 2SC5064 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.41 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5064 Datasheet
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| Part number | 2SC5064 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.41 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5064 Datasheet
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·Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP.
@VCE = 5 V, f = 1.0 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5064.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5064 | NPN Transistor | Toshiba Semiconductor |
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