Datasheet Details
| Part number | 2SC5086 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 308.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5086 Datasheet
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| Part number | 2SC5086 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 308.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5086 Datasheet
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·Low Noise NF = 1.1dB TYP.
@ f = 1GHz ·High Gain ︱S21e︱2= 11dB TYP.
@ f = 1GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3V IC Collector Current-Continuous 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 40 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5086 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5086 | NPN Transistor | Toshiba Semiconductor |
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2SC5086FT | NPN TRANSISTOR | Toshiba Semiconductor |
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