Datasheet Details
| Part number | 2SC5090 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.12 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5090 Datasheet
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| Part number | 2SC5090 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.12 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5090 Datasheet
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·High Gain Bandwidth Product fT = 10 GHz TYP.
·High Gain, Low Noise Figure ︱S21e︱2 = 13 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous 40 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5090 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5090.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5090 | NPN TRANSISTOR | Toshiba Semiconductor |
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