Datasheet Details
| Part number | 2SC5116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5116 Datasheet
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| Part number | 2SC5116 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.47 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5116 Datasheet
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·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 4A ICM Collector Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 8A 40 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5116 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
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