Datasheet Details
| Part number | 2SC5172 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.96 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5172 Datasheet
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| Part number | 2SC5172 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 178.96 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5172 Datasheet
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·High Collector Breakdown Voltage : VCEO =400V APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications isc Product Specification 2SC5172 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 5A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2A 25 W 150 ℃ -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5172 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
INCHANGE Semiconductor isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5172 | NPN TRANSISTOR | Toshiba Semiconductor |
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