Datasheet Details
| Part number | 2SC5227 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.85 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5227 Datasheet
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| Part number | 2SC5227 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.85 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5227 Datasheet
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·High Gain Bandwidth Product fT = 7 GHz TYP.
·High Gain, Low Noise Figure ︱S21e︱2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF wideband low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 70 mA 0.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5227.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5227 | NPN TRANSISTOR | Sanyo Semicon Device |
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2SC5227A | NPN Epitaxial Planar Silicon Transistor | Sanyo |
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2SC5227A | RF Transistor | ON Semiconductor |
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