2SC5241 - Silicon NPN Power Transistors

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose p

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Datasheet Details

Part number	2SC5241
Manufacturer	Inchange Semiconductor
File Size	214.17 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC5241 Datasheet
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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 IBM Base Current-Peak 4 PT Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBO

Published: Aug 31, 2013 |