2SC5265
2SC5265 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-(Vcb=1200V)
- High Reliability
- Adoption of MBIT process
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Inverter-controlled
- Lighting
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC5265 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
