Datasheet Details
| Part number | 2SC5296 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.26 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC5296 Download (PDF) |
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| Part number | 2SC5296 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.26 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC5296 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5296 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5296 | NPN TRANSISTOR | Sanyo Semicon Device |
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