2SC5296 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2SC5296
Manufacturer	Inchange Semiconductor
File Size	220.26 KB
Description	Silicon NPN Power Transistors
Datasheet	2SC5296 Datasheet
Additional preview pages of the 2SC5296 datasheet.

Product details

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V

📁 Similar Datasheet

2SC5291 - NPN TRANSISTOR (Sanyo Semicon Device)
2SC5294 - Silicon NPN triple diffusion mesa type Power Transistor (Panasonic Semiconductor)
2SC5294A - Silicon NPN Transistor (Panasonic)
2SC5295 - NPN TRANSISTOR (Panasonic Semiconductor)
2SC5295G - Silicon NPN Transistor (Panasonic)
2SC5295J - Silicon NPN Transistor (Panasonic)
2SC5297 - NPN TRANSISTOR (Sanyo Semicon Device)
2SC5298 - NPN TRANSISTOR (Sanyo Semicon Device)

Other Datasheets by Inchange Semiconductor

2SC5218 - Silicon NPN Transistor
2SC5227 - Silicon NPN Transistor
2SC5241 - Silicon NPN Power Transistors
2SC5252 - Silicon NPN Power Transistor
2SC5265 - Silicon NPN Power Transistor
2SC5027 - Silicon NPN Transistor

Published: Mar 7, 2009 |