Datasheet Details
| Part number | 2SC5353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.90 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5353 Datasheet
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| Part number | 2SC5353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.90 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5353 Datasheet
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) =1V(Max) @ IC= 1.2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-peak tp<5ms 5 A IB Base Current-Continuous Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Ti Junction Temperature 1 A 25 W 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector -Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector - Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5353.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5353 | NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5353 | HIGH VOLTAGE NPN TRANSISTOR | UTC |
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2SC5353B | HIGH VOLTAGE NPN TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
| 2SC5352 | Silicon NPN Power Transistor |
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