Datasheet Details
| Part number | 2SC5450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.31 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC5450 Download (PDF) |
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| Part number | 2SC5450 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.31 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC5450 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1600V (Min) ·High Speed Switching ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5450 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 1.75A VBE(sat) Base-Emitter Saturation Voltage IC= 7A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5450 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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