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2SC5890 - Silicon NPN RF Transistor

Description

fT = 7.8 GHz TYP.

PG = 12 dB TYP., NF = 1.0 dB typ.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF

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Datasheet Details

Part number 2SC5890
Manufacturer Inchange Semiconductor
File Size 170.72 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC5890 Datasheet
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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5890 DESCRIPTION ·High Gain Bandwidth Product fT = 7.8 GHz TYP. ·High power gain and low noise figure ; PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF ~ VHF wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 75 mA 0.7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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