Datasheet Details
| Part number | 2SC5900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5900 Datasheet
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| Part number | 2SC5900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5900 Datasheet
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·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 3.0 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC5900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5900 | NPN TRANSISTOR | Sanyo Semicon Device |
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|---|---|
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