Datasheet Details
| Part number | 2SC5949 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.78 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC5949 Datasheet
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| Part number | 2SC5949 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.78 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC5949 Datasheet
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Complement to Type 2SA2121 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 220 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5949 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5949.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC5949 | Silicon NPN Transistor | Toshiba Semiconductor |
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