Datasheet Details
| Part number | 2SC6090 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.54 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC6090 Datasheet
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| Part number | 2SC6090 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 170.54 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SC6090 Datasheet
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·Collector-Base Breakdown Voltage- : V(BR)CEO= 1500V (Min) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor 2SC6090 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A;
IB= 1.44A VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6090.
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|---|---|---|---|
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