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2SC643

The 2SC643 is Silicon NPN Power Transistors designed by Inchange Semiconductor.

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Part number 2SC643
Manufacturer Inchange Semiconductor
File Size 177.28 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2SC643_InchangeSemiconductor.pdf
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC C

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