Datasheet Details
| Part number | 2SC681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.72 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC681 Download (PDF) |
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| Part number | 2SC681 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.72 KB |
| Description | Silicon NPN Power Transistors |
| Download | 2SC681 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor 2SC681.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC681 | NPN TRANSISTOR | Mospec Semiconductor |
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|---|---|
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