2SCR586D
2SCR586D is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Suitable for middle power drivers
- Low VCE(sat)
VCE(sat)≤0.3V@(IC=2A,IB=100m A)
- plementary NPN types:2SAR586D
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
2SCR586D isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
