Datasheet Details
| Part number | 2SD1032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.61 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1032 Download (PDF) |
|
|
| Part number | 2SD1032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.61 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1032 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1032 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1032A | Si NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
| 2SD103 | Silicon NPN Power Transistors |
| 2SD1044 | Silicon NPN Darlington Power Transistor |
| 2SD1071 | Silicon NPN Transistor |
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |