Datasheet Details
| Part number | 2SD1071 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.72 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SD1071 Datasheet
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| Part number | 2SD1071 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.72 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
2SD1071 Datasheet
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·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ·Including zener diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO(SUS) Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V VZ Zener Voltage 300 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 40 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VZ Zener Voltage IZ= 0.1mA V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 15mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Darlington Power Transistor 2SD1071.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1071 | POWER TRANSISTOR | Fuji |
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2SD1071 | NPN EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |
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